Micro-electromechanical system devices

ABSTRACT

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.

This is a continuation application of U.S. patent application Ser. No.12/133,104, entitled “Micro-Electromechanical System Devices” which wasfiled on Jun. 4, 2008, and which is hereby incorporated herein byreference.

TECHNICAL FIELD

The present invention relates generally to electronic devices, and moreparticularly to micro-electromechanical system (MEMS) devices.

BACKGROUND

MEMS devices comprise a relatively new technology that combinessemiconductors with very small mechanical devices. MEMS devices aremicro-machined sensors, actuators, and other structures that are formedby the addition, subtraction, modification, and patterning of materialsusing techniques originally developed for the integrated circuitindustry. MEMS devices are used in a variety of applications, such as insensors for motion controllers, inkjet printers, airbags, microphones,and gyroscopes. MEMS devices are increasingly used in a variety ofapplications such as mobile phones, automobiles, global positioningsystems (GPS), video games, consumer electronics, automotive safety, andmedical technology. Many potential and current applications requireintegration of MEMS devices with other types of chips or functionality.For example, MEMS devices may be integrated with bipolar, CMOS logic, orother peripheral devices such as trench or MIM capacitors.

Manufacturing MEMS devices is challenging in many aspects. Fabricatingsmall moving parts of MEMS devices with lithography processes used insemiconductor technology has limitations. For example, lithographysystems and processes restrict the minimum gap between moving andstationary parts of MEMS devices. Further, for reducing cost of thesedevices, it is imperative to minimize manufacturing costs.

Thus, what is needed in the art are cost effective structures for MEMSdevices and methods of manufacture thereof.

SUMMARY OF THE INVENTION

These and other problems are generally solved or circumvented, andtechnical advantages are generally achieved, by embodiments of theinvention.

Embodiments of the invention include MEMS devices and methods ofmanufacturing the MEMS devices. In accordance with an embodiment of theinvention, the MEMS device comprises a semiconductive layer disposedover a substrate; a trench disposed in the semiconductive layer, thetrench comprising a first sidewall and an opposite second sidewall. TheMEMS device further comprises a first insulating material layer disposedover an upper portion of the first sidewall, and a conductive materialdisposed within the trench; and a first air gap disposed between theconductive material and the semiconductive layer.

The foregoing has outlined rather broadly the features and technicaladvantages of an embodiment of the present invention in order that thedetailed description of the invention that follows may be betterunderstood. Additional features and advantages of embodiments of theinvention will be described, which form the subject of the claims of theinvention. It should be appreciated by those skilled in the art that theconception and specific embodiments disclosed may be readily utilized asa basis for modifying or designing other structures or processes forcarrying out the same purposes of the present invention. It should alsobe realized by those skilled in the art that such equivalentconstructions do not depart from the spirit and scope of the inventionas set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a cross-sectional view of a MEMS device in accordancewith an embodiment of the invention;

FIG. 2, which includes FIGS. 2 a-2 q, illustrates cross-sectional viewsof a MEMS device at various stages of fabrication in accordance with anembodiment of the invention;

FIG. 3 illustrates a flow chart describing the stages of fabrication ofthe MEMS device described in FIG. 2, in accordance with an embodiment ofthe invention;

FIG. 4 illustrates a cross-sectional view of a MEMS device in accordancewith an embodiment of the invention, wherein the MEMS device illustratesa structure with multiple driver electrodes;

FIG. 5 illustrates a cross-sectional view of a semiconductor chip inaccordance with an embodiment of the invention, wherein thesemiconductor chip comprises a MEMS device and a bipolar device;

FIG. 6 illustrates a cross-sectional view of a semiconductor chip inaccordance with an embodiment of the invention, wherein thesemiconductor chip comprises a MEMS device and a CMOS device;

FIG. 7 illustrates a cross-sectional view of a semiconductor chip inaccordance with an embodiment of the invention, wherein thesemiconductor chip comprises a MEMS device and a trench capacitor; and

FIG. 8 illustrates a cross-sectional view of a semiconductor chip inaccordance with an embodiment of the invention, wherein thesemiconductor chip comprises a MEMS device, a bipolar device, and atrench capacitor.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the embodiments ofthe present invention and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of various embodiments of the invention arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

MEMS resonators offer significant advantages compared to quartzresonators in terms of size, shock resistance, electro-magneticcompatibility, performance, and integration into complementary metaloxide semiconductor (CMOS) or BiCMOS circuitry. However, MEMS devicesbased on silicon exhibit high motional resistance compared to quartz,which inhibits direct replacement of a quartz resonator by a siliconresonator in some applications. In addition, MEMS devices frequentlyrequire high operating voltages.

One way to overcome these limitations is to form MEMS devices withnarrow gaps. The narrow gaps enable good electromechanical coupling,which enables operation at low bias voltages. For example, such narrowgap devices may be operable at voltages lower than 20V enablingintegration with other electronic devices such as CMOS or RF/analogcomponents. Similarly, narrow gaps in MEMS devices enable high frequencyoperation, for example, f>1 MHz, and enable achieving operationalimpedance levels at low bias voltages.

However, manufacturing devices with narrow gaps is challenging as therequired dimensions are thinner than those allowed by typicallithography processes. Further, any specific processes introduced maynot be compatible with processes for fabricating other components (e.g.,CMOS devices) of the chip.

Embodiments of the invention overcome these limitations of MEMS devices.In various embodiments, the MEMS devices are fabricated with processflows common to standard CMOS and/or bipolar technologies. The MEMSdevices thus fabricated comprise gaps formed by a subtractive processresulting in very narrow gaps between the electrodes of the MEMSresonator devices. Consequently, the MEMS devices exhibit high resonatorquality factors and excellent capacitive coupling factors, resulting inlow motional resistance values and low actuation voltages. Further, invarious embodiments, the device regions of the MEMS devices are formedby processes common to the fabrication of other components such astrench isolation, trench capacitors, and bipolar transistors, thusreducing manufacturing costs.

The present invention will be described with respect to embodiments inspecific contexts, namely implemented in MEMS resonator devices.Embodiments of the invention may also be implemented in otherapplications such as MEMS devices comprising sensors, actuators,switches, accelerometers, and other MEMS structures having moveableparts and elements.

FIG. 1 illustrates a structural embodiment of a MEMS device inaccordance to an embodiment of the invention. A method of fabricatingthe MEMS device using embodiments of the invention will be describedwith respect to the cross-sectional views of FIGS. 2 a-2 q, and the flowchart of FIG. 3. Additional structural embodiments of the MEMS devicewill then be described with respect to the cross-sectional views ofFIGS. 4-8.

FIG. 1 illustrates a MEMS resonator device 100 in accordance with anembodiment of the invention. In various embodiments, the MEMS resonatordevice 100 comprises a first electrode 101 comprising a trench fill 17of a first deep trench 31, a MEMS resonator electrode 102 comprising asecond doped layer 6, and an air gap 47 between the electrodes. The airgap 47 is disposed below and around a portion of the second doped layer6. The electrodes are contacted by suitable doped regions as well ascontacts. The MEMS resonator device 100 is described in detail below, inaccordance with an embodiment of the invention.

Referring to FIG. 1, the MEMS resonator device 100 includes a substrate1. In one embodiment, the substrate 1 is a silicon-on-insulator (SOI)wafer. Some suitable examples of the substrate 1 are a bulkmono-crystalline silicon substrate (or a layer grown thereon orotherwise formed therein), a layer of (110) silicon on a (100) siliconwafer, or a germanium-on-insulator (GeOI) wafer. In other embodiments,other semiconductors such as silicon germanium, germanium, galliumarsenide, indium arsenide, indium gallium arsenide, indium antimonide orothers can be used with the wafer. The substrate 1 may also includeactive components such as transistors or diodes, or passive componentssuch as inductors or resistors, among others.

The substrate 1 includes a first insulating layer 2 disposed over thesubstrate 1. The first insulating layer 2 comprises a thickness of about100 nm to about 1000 nm in one embodiment. The first insulating layer 2comprises silicon dioxide, although some embodiments may comprise othermaterials such as silicon nitride, or silicon oxynitride.

A thin device layer 3 is disposed on the first insulating layer 2. Thethin device layer 3 comprises a thickness of about 500 to about 1000 nm,although the thin device layer 3 may comprise a larger thickness inother embodiments. The thin device layer 3 comprises similar materialsas described for the substrate 1, and comprises single crystal silicon.The thin device layer 3 is doped as an n-type or p-type region. The thindevice layer 3 is doped n-type with arsenic or phosphorus atoms with aconcentration of about 1015/cm3 to about 1017/cm3 in one embodiment. Thethin device layer 3 can also be doped with lithography to achievelocally doped regions. In some embodiments, the thin device layer 3 maycomprise amorphous silicon or polysilicon.

A first doped layer 4 is disposed on the thin device layer 3. The firstdoped layer 4 typically comprises an epitaxial layer used in thefabrication of other transistors such as bipolar and CMOS transistors.The first doped layer 4 comprises the same material as the thin devicelayer 3 in one embodiment. However, the first doped layer 4 comprises adifferent doping than the thin device layer 3. In various embodiments,the first doped layer 4 is doped as an n-type or p-type region. Thefirst doped layer 4 is an n-type layer comprising arsenic or phosphorusatoms up to a concentration of about 1014/cm3 in one embodiment. Thefirst doped layer 4 comprises a thickness of about 250 nm to about10,000 nm in one embodiment.

The second doped layer 6 is disposed adjacent the first doped layer 4and over the thin device layer 3. The second doped layer 6 is alsodisposed adjacent a portion of the thin device layer 3. The second dopedlayer 6 is a low resistance region and comprises high doping. The seconddoped layer 6 comprises the same type of doping as the first doped layer4 in one embodiment. The second doped layer 6 is an n-type layercomprising arsenic or phosphorus atoms up to a concentration of about1019/cm3 to about 1021/cm3 and typically about 1020/cm3 in oneembodiment.

A third doped layer 5 is disposed above the first doped layer 4 and thesecond doped layer 6. The third doped layer 5 comprises a same dopingtype as the first doped layer 4. The third doped layer 5 is an n-typelayer comprising arsenic or phosphorus atoms up to a concentration orp-type comprising boron atoms of about >1015/cm3 in one embodiment. Invarious embodiments, the third doped layer 5 and underlying first dopedlayer 4 comprises other components such as CMOS logic Bipolar Devices,RF/analog components, peripheral devices and/or others, forming a singlechip.

A fourth doped layer 8 is disposed adjacent the third doped layer 5 andabove the second doped layer 6. The fourth doped layer 8 comprises a lowresistance region and comprises a same type of doping as the seconddoped layer 6. The fourth doped layer 8 is doped to a concentration ofabout 1019/cm3 to about 1021/cm3 and at least about 1020/cm3 in someembodiments.

The first deep trench 31 is disposed adjacent the second doped layer 6,and disposed between the second doped layer 6 and the first doped layer4. The first deep trench 31 comprises a depth from about 500 nm to about10,000 nm.

The first deep trench 31 comprises an inner core and an outer shell orlining. The inner core of the first deep trench 31 is filled with thetrench fill 17 comprising a conductive material. The trench fill 17 cancomprise polysilicon although in other embodiments, other materials suchas amorphous silicon, amorphous polysilicon, silicon germanium (SiGe),silicon carbon or carbon may be used. Some embodiments may also usemetallic materials as the trench fill 17. Examples of suitable metallicmaterials comprising the trench fill 17 include metallic nitrides suchas TiN, TaN, and WN, metal silicides such as TiSi, WSi, CoSi, and NiSi,and metals such as Ti, Ta, W, Ru, Al, Cu, and Pt, or combinationsthereof. Part of the outer shell is covered by a second insulating layer16. The second insulating layer 16 comprises silicon dioxide, althoughsome embodiments may comprise other materials such as silicon nitride,or silicon oxynitride.

An air gap 47 is disposed over the remaining part of the outer shell ofthe first deep trench 31. The air gap 47 is hence disposed between thesecond doped layer 6 and the trench fill 17. The air gap 47 comprisesgas at low pressures. However, in some embodiments air gap 47 comprisesgas at pressures up to atmospheric pressure. The gas in the air gap 47is inert (e.g., nitrogen, argon) in one embodiment to prevent oxidationof the trench fill 17. However, if the oxide of the trench fill 17 isalso conductive, this limitation may be relaxed. The air gap 47 in aregion between the second doped layer 6 and the trench fill 17 comprisesa thickness of about 5 nm to about 500 nm, and less than about 100 nm,in one embodiment. However, embodiments used, for example, in wirelesscommunication require devices with high quality factors (minimize nonconservative loss of energy) and low phase noise. In such embodiments, aresonator device with a high Q-factor is formed with a large air gap toalso minimize phase noise. For example, an air gap of about 500 nm isabout optimum. Increasing the air gap further while reducing phasenoise, disadvantageously increases the required supply or drive voltage.

A third insulating layer 46 is disposed above the third doped layer 5and the fourth doped layer 8. Fourth insulating layers 18 are disposedabove the trench fill 17. The fourth insulating layers 18 providesupport for the cover layer 19 that forms an opening into the air gap47. The fourth insulating layers 18 comprise a nitride, e.g., siliconnitride in one embodiment.

The opening 51 of the air gap 47 is encapsulated by a fifth insulatinglayer 20, the fifth insulating layer 20 being disposed above the thirdinsulating layer 46 and the fourth insulating layers 18. The fifthinsulating layer 20 comprises a planarizing oxide in one embodiment,although other suitable sealant materials may be used in otherembodiments. The fifth insulating layer 20 seals the air gap 47 andmaintains the integrity of the air gap 47.

Contacts 21 disposed in the third insulating layer 46 contact the fourthdoped layer 8 and the trench fill 17. The contacts 21 are connected topads 22 or metallization levels that help to make electrical contact tothe devices and to connect to other components on the chip. A sixthinsulating layer 23 is disposed on the fifth insulating layer 20. Thesixth insulating layer 23 comprises a passivation layer.

A second deep trench 32 is also disposed on an opposite side of thesecond doped layer 6 if further electrical isolation is required. Thesecond deep trench 32 connects to the first insulating layer 2 and thethird insulating layer 46 completely isolating the MEMS device. Forexample, second deep trench 32 is narrower than the first deep trench 31and is hence completely filled with the second insulating layer 16.

It is noted that FIG. 1 illustrates a cross section, and variousstructures with different top cross sections can be formed. For example,the MEMS device 100 may comprise a square, rectangular, or disk shapedtop cross section. Correspondingly, the vibration mode of the MEMSresonator may comprise different modes, for example, vertical,longitudinal, and combinations thereof. Although described with respectto a first deep trench and a second deep trench, other embodiments maycomprise more trenches forming the MEMS resonator device 100.

A method of fabricating the MEMS device using embodiments of theinvention will be described with respect to the cross-sectional views ofFIGS. 2 a-2 q, and the flow chart of FIG. 3.

Referring to FIG. 2 a, a silicon-on-insulator (SOI) wafer is used as astarting material. The SOI wafer comprises a first insulating layer 2deposited over a substrate 1. A thin device layer 3 is disposed over thefirst insulating layer 2. The thin device layer 3 comprises a siliconlayer doped to a low n-type doping in one embodiment. A first dopedlayer 4 is first grown selectively from the thin device layer 3. Thefirst selective epitaxial growth process used is commonly shared in thefabrication of other components such as bipolar, CMOS transistors,comprises, for example, a chemical vapor deposition process. In otherembodiments, other deposition processes, for example, epitaxy can beused. The first doped layer 4 grown using the first epitaxial growthprocess comprises the same material as the thin device layer 3. Thefirst doped layer 4 is an n-type layer comprising phosphorus atoms,p-type comprising boron atoms up to a concentration of about >1014/cm3.

Referring to FIG. 2 b, a resonator electrode layer is doped. A firstmask layer is deposited over the first doped layer 4 (not shown). Usinga first lithographic process, a portion of the first doped layer 4 isopened. Arsenic or phosphorus atoms are implanted at heavy doses tohighly dope the opened area of the first doped layer 4. Arsenic orphosphorus is implanted into the first doped layer 4 at doses from about1014 cm-3 to about 5×1016 cm-3 in one embodiment. The implanted wafer isannealed to form a second doped layer 6. The diffused second doped layer6 extends into the thin device layer 3 as illustrated in FIG. 2 b. Afterthe anneal, the second doped layer 6 comprises a doping of about1019/cm3 to about 1021/cm3 and typically about 1020/cm3 in oneembodiment. The second doped layer 6 thus formed comprises the resonatorelectrode of the MEMS resonator device 100. If bipolar transistors arefabricated, corresponding implants, for example, for forming thecollector regions are fabricated by implanting into the first dopedlayer 4, followed by annealing.

As illustrated in FIG. 2 c, a third doped layer 5 is deposited above thefirst doped layer 4 and the second doped layer 6 using a secondepitaxial growth process. The third doped layer 5 comprises the samedoping type as the first doped layer 4. The third doped layer 5 is ann-type layer comprising phosphorus atoms up to a concentration of about1015/cm3 in one embodiment.

Using a second lithographic process, a portion of the third doped layer5 is opened. Arsenic or phosphorus atoms are implanted at heavy doses todope the exposed third doped layer 5. The implanted wafer is annealed toform a fourth doped layer 8. The fourth doped layer 8 is thus disposedadjacent the third doped layer 5, and above the second doped layer 6.The fourth doped layer 8 is doped to a concentration of about 5×1019/cm3to about 1021/cm3 and at least about 1020/cm3 in one embodiment tominimize resistances. Other active devices, for example, CMOS or bipolardevices, if fabricated are also processed at this time. For example, ifCMOS devices are built, the third doped layer 5 is doped by furtherimplantations and anneals to form source, drain and channel regions.Similarly, after suitable masking, the emitter and base regions ofbipolar devices are fabricated by implanting into the third doped layer5, followed by annealing.

As illustrated in FIG. 2 d, an etch stop liner 12 is deposited over thethird doped layer 5. The etch stop liner 12 comprises a nitride liner inone embodiment, although other suitable materials with sufficient etchselectivity may be used in other embodiments. A trench hard mask layer13 and a poly hard mask layer 14 are deposited.

Referring to FIGS. 2 e and 2 f, the hard mask layers are patterned toform trenches. The trench pattern may comprise different dimensions. Forexample, trenches for isolation and MEMS device electrodes may comprisedifferent trench dimensions. Using a third lithography process, the polyhard mask layer 14 is patterned (FIG. 2 e). A trench mask layer isdeposited and etched to form a trench mask spacers 15 on the sidewallsof the poly hard mask layer 14. The trench mask spacer 15 creates smalltrench dimensions by reducing the width of the trench. Consequently,trench widths below lithography capability are formed in differentembodiments for forming narrow trenches, e.g., second deep trench 32. Areactive ion etch (RIE) process is used to form the trenches. The RIEprocess is stopped on the etch stop liner 12 and followed by a wet etchto remove the etch stop liner 12 (FIG. 2 f).

Referring to FIG. 2 g, after the removal of the etch stop liner 12, asecond RIE process is used to etch the underlying silicon layers. TheRIE etch is stopped when it reaches the first insulating layer 2comprising an oxide. Deep trenches are formed using RIE and useprocesses common to formation of deep trenches in other devices, forexample, trench capacitors. For example, in FIG. 2 g, the first deeptrench 31 is formed from a process common to the formation of trenchcapacitors.

As illustrated in FIGS. 2 h and 2 i, the poly hard mask layer 14, andthen the trench hard mask layer 13 are removed, stopping on the etchstop liner 12. Referring to FIG. 2 j, a thin layer of a secondinsulating layer 16 is deposited into the first and second deep trenches31 and 32. In different embodiments, the second insulating layer 16 isthermally grown via oxidation to form a thin controlled layer of thermaloxide. Alternately, a thin nitride or oxynitride may be deposited overthe trench sidewalls and further oxidized using a thermal oxidationprocess. The second insulating layer 16 forms a liner on the sidewallsof the first deep trench 31, whereas being narrower, the secondinsulating layer 16 fills up the second deep trench 32. An anisotropicetch is used to remove the second insulating layer 16 from the topsurface of the etch stop liner 12 (FIG. 2 j).

Referring to FIG. 2 k, a driver electrode is formed. A trench fill 17comprising a conductive material is deposited into the first deep trench31 forming an inner core of the driver electrode. The trench fill 17 isdoped polysilicon deposited using, for example, a low pressure chemicalvapor deposition process in one embodiment. In other embodiments, thetrench fill 17 may comprise other conductive materials such as amorphousSi, SiGe, or SiC among others. For example, in one embodiment the trenchfill 17 may comprise a conductive outer liner and a conductive innerfill. For example, the conductive outer liner may comprise a material toprotect against structural failure, out-diffusion of conductive innerfill, or thermal failure during subsequent processing. In variousembodiments, the conductive outer liner may comprise TiN. The conductiveinner fill may also comprise metal such as Ti, Ta, Ni, Co, Pt, W,corresponding silicides, corresponding nitrides, corresponding oxides,or combinations thereof. The trench fill 17 is patterned to form astructure as illustrated in FIG. 2 k. Additional components such CMOSgates may also be deposited and patterned during this step.

As illustrated in FIGS. 2 l and 2 m, the etch stop liner 12 is etchedand a third insulating layer 46 is deposited. The third insulating layer46 is planarized, for example, using a chemical mechanical polishingprocess. The third insulating layer 46 is patterned and fourthinsulating layers 18 deposited in the patterned third insulating layer46 as illustrated in FIG. 2 n. A cover layer 19 comprising, for example,polysilicon is deposited over the third insulating layer 46, andpatterned. A photo resist layer 52 is deposited and patterned to openonly the opening 51.

Referring to FIG. 2 o, using the patterned cover layer 19 as a mask, thethird insulating layer 46 is etched through the opening 51. The thirdinsulating layer 46 is etched using a wet etch, which selectively etchesthe third insulating layer 46, the second insulating layer 16, and theunderlying first insulating layer 2. The wet etch is typically timed tostop at the appropriate layer. In various embodiments, the wet etchcomprises hydrofluoric acid. Examples include straight HF and bufferedHF.

As illustrated in FIG. 2 o, an air gap 47 is formed along the sidewallsof the first deep trench 31. The air gap 47 is encapsulated bydepositing a fifth insulating layer 20 (FIG. 2 p). The fifth insulatinglayer 20 is deposited using a chemical deposition process CVD processsuch as a low pressure process CVD, or other vapor deposition processes.The use of a low pressure process for the encapsulation helps to createthe air gap 47 at a low pressure. In some embodiments, atmosphericpressure CVD may be used, which would correspondingly seal in gases atatmospheric pressure.

Referring next to FIG. 2 q, the contacts 21 are formed through the fifthinsulating layer 20 and the underlying third insulating layer 46 tocontact the fourth doped layer 8 forming the resonator contact and thedriver contact. A sixth insulating layer 23 is disposed over the fifthinsulating layer 20, and comprises pads 22 for contacting.

Structural embodiments of the MEMS resonator device are described withrespect to the cross-sectional views of FIGS. 4-8.

Referring first to FIG. 4, the chip 200 comprises a MEMS resonatordevice 100, in accordance with an embodiment of the invention. Unlikethe embodiment described in FIG. 1, the MEMS resonator device 100illustrated in FIG. 4 comprises at least two deep trenches. Theresonator electrode (second doped layer 6) is abutted between a firstdeep trench 31 and a third deep trench 33. The first deep trench 31 andthe third deep trench 33 are filled forming two driver electrodes thatmay be biased simultaneously, for example, with a suitable phasedifference.

FIG. 5 illustrates an embodiment illustrating a single chip comprisingbipolar transistors and MEMS devices. The bipolar transistors may befabricated either adjacent to the MEMS devices or in different regionsof the chip.

Referring to FIG. 5, the chip 200 comprises a MEMS resonator device 100and a bipolar transistor 150 fabricated adjacent to each other. Further,as described with respect to FIGS. 2 b and 2 c, the bipolar transistorsare fabricated along with the MEMS resonator device 100. Hence, thecollector region 7 of the bipolar process and the resonator electrode(second doped layer 6) comprise similar doping and thicknesses (as theyare formed from the same implant process as described in FIG. 2 b).Similarly, a base region 9 comprising an opposite doping to the thirddoped layer 5 is disposed in the third doped layer 5. If the collectorregion 7 comprises an n-type doping, the base region comprises a p-typedoping. An emitter region 10 of the bipolar transistor 150 is disposedabove the collector region 7 and comprises a high doping of the samedoping type as the collector region 7. In this example, the emitterregion 10 comprises an n+ doping. As described with respect to FIG. 2 c,the base region 9 and the emitter region 10 are formed along with theformation of the fourth doped layer 8.

FIG. 6 illustrates an embodiment of a single chip comprising CMOStransistors and MEMS devices. The CMOS transistors may be fabricatedeither adjacent to the MEMS devices or in different regions of the chip.

Referring to FIG. 6, the chip 200 comprises a MEMS resonator device 100and a CMOS transistor 250 fabricated adjacent to each other. Further, asdescribed with respect to FIGS. 2 b and 2 c, the CMOS transistor 250 isfabricated along with the MEMS resonator device 100. Hence, the well 71of the CMOS transistor and the resonator electrode (second doped layer6) comprise similar doping and thicknesses (as they are formed from thesame implant process as described in FIG. 2 b). Similarly, source/drainregions 74 comprising an opposite doping to the third doped layer 5 isdisposed in the third doped layer 5. If the third doped layer 5comprises an n-type doping, the source/drain regions 74 comprise ap-type doping. The source/drain extensions 72 are also disposed in thethird doped layer 5 and comprise similar doping to the source/drainregions 74. The channel region 75 of the CMOS transistor 250 is disposedin the third doped layer 5, and may comprise additional doping tominimize leakage currents between the source/drain extensions 72. Asdescribed with respect to FIG. 2 c, the source/drain regions 74, thesource/drain extensions 72, and channel region 75 are formed along withthe formation of the fourth doped layer 8. A gate dielectric layer (notshown) is disposed above the channel region 75. The CMOS transistor 250additionally comprises a gate region 73 disposed above gate dielectriclayer and the channel region 75. In different embodiments, the gateregion 73 may be formed along with the trench fill process as describedin FIG. 2 k.

FIG. 7 illustrates an embodiment of a single chip comprising trenchcapacitors and MEMS devices. The trench capacitors may be fabricatedeither adjacent to the MEMS devices or in different regions of the chip.

Referring to FIG. 7, the chip 200 comprises a MEMS resonator device 100and a trench capacitor 350 fabricated adjacent to each other. The MEMSresonator device 100 comprises a structure similar to that described inFIG. 1. Hence, the chip comprises a first deep trench 31 forming thedriving electrode of the MEMS resonator device 100, and an optionalsecond deep trench 32 for isolation. As illustrated in FIG. 7, thetrench capacitor 350 comprises a fourth deep trench 34. The trench fill17 of the fourth deep 34 comprises a first electrode of the trenchcapacitor 350, and the first, second, third doped layers 3, 4, 5comprise the second electrode of the trench capacitor 350, the secondinsulating layer 16 comprising the capacitive dielectric of the trenchcapacitor 350.

In various embodiments, the trench capacitor 350 is identical to theMEMS driver electrode except that the trench capacitor 350 does notcomprise the air gap 47. The trench capacitor 350 may also comprisedimensions and layer thicknesses different from the driver electrode ofthe MEMS resonator device 100.

FIG. 8 illustrates an embodiment of a single chip comprising bipolartransistors, MEMS devices and deep trench capacitors. The bipolartransistors and deep trenches may be fabricated either adjacent to theMEMS devices or in different regions of the chip.

The embodiment illustrated in FIG. 8 combines the embodiments of FIGS. 5and 7. For example, the trench capacitor 350 is disposed on one side ofthe MEMS resonator device 100 and the bipolar transistor 150 is disposedon the other side of the MEMS resonator device 100. The MEMS resonatordevice 100, the bipolar transistor 150, and the trench capacitor 350 arefabricated in a common process flow as described in various embodiments.Advantageously combining common processes, manufacturing costs of theintegrated chip can be significantly lowered.

Although embodiments of the present invention and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the invention as defined by the appended claims.For example, it will be readily understood by those skilled in the artthat many of the features, functions, processes, and materials describedherein may be varied while remaining within the scope of the presentinvention. Moreover, the scope of the present application is notintended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present invention,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to be developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present invention. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

1. A method of manufacturing a semiconductor chip comprising MEMSdevices, the method comprising: forming a semiconductive layer over asubstrate, the substrate comprising a buried oxide layer; forming afirst trench in the semiconductive layer, the first trench exposing theburied oxide layer; forming an insulating material layer over a firstsidewall and an opposite second sidewall of the first trench and exposedburied oxide layer; filling the first trench with a conductive material;and forming an air gap by removing the insulating material layer fromthe second sidewall, the air gap being formed around top and bottomsurfaces of the semiconductive layer.
 2. The method of claim 1, whereinforming the semiconductive layer comprises: selectively depositing afirst semiconductive layer; selectively doping the first semiconductivelayer to form a first highly doped region; selectively depositing asecond semiconductive layer; and selectively doping the secondsemiconductive layer to form a second highly doped region, wherein thesecond highly doped region is disposed above the first highly dopedregion.
 3. The method of claim 2, wherein the first highly doped regioncomprises resonator electrode regions of the MEMS devices.
 4. The methodof claim 3, wherein the first highly doped region comprises collectorregions of bipolar transistors.
 5. The method of claim 2, wherein thesecond highly doped region comprises contacts and/or collector regionsof bipolar transistors.
 6. The method of claim 2, further comprising:forming base and emitter regions of bipolar transistors on the secondsemiconductive layer.
 7. The method of claim 2, further comprising:forming source/drain regions, source/drain extension regions, andchannel regions of CMOS transistors on the second semiconductive layer.8. The method of claim 1, further comprising: forming an isolationtrench by forming a second trench in the semiconductive layer, the firsttrench and the second trench formed using a common etch process, thesecond trench being narrower than the first trench, wherein forming theinsulating material fills the second trench.
 9. The method of claim 1,further comprising: forming a trench capacitor by forming a third trenchin the semiconductive layer, the first trench and the third trenchformed using a common etch process, the third trench being aboutidentical to the first trench.
 10. A method of manufacturing asemiconductor chip comprising a MEMS device, the method comprising:epitaxially growing a lightly doped first semiconductive layer over asubstrate, the substrate comprising a buried oxide layer; doping thefirst semiconductive layer to form a first highly doped region;epitaxially growing a lightly doped second semiconductive layer on thefirst semiconductive layer; forming first and second trenches in thefirst and second semiconductive layers, the first and second trenchesexposing the buried oxide layer; forming an insulating layer over thefirst and second trenches, wherein the insulating layer fills the secondtrench; filling the first trench with a conductive material; and formingan air gap in the first trench by removing the insulating layer, the airgap being formed on a top surface of the second semiconductive layer anda top surface of the substrate.